发明名称 |
Diffusion bonding of silicon carbide components - via heat and pressure producing gas-tight joints withstanding high temps. and corrosion |
摘要 |
<p>The components consist of SiC which has been infiltrated with Si, or reaction-bonded SiC; and they are joined together by diffusion bonding in vacuo or a protective gas atmos. The joints obtd. are mechanically stable at up to ca. 1400 deg.C; gastight; and resistant to corrosion or oxidn. The joints are pref. made by a combined diffusion-reaction welding process, using an intermediate layer (I) between the joint surfaces. Layer (I) is pref. Si; a metal alloy contg. Si; Si contq. B or Al; or a mixt. of Si and colloidal carbon. Layer (I) can be applied via powder spraying; thermal decompsn. of a soln.; sputtering; evapn.; or electrodeposition.</p> |
申请公布号 |
DE3003186(A1) |
申请公布日期 |
1981.08.06 |
申请号 |
DE19803003186 |
申请日期 |
1980.01.30 |
申请人 |
DORNIER SYSTEM GMBH |
发明人 |
SCHMIDBERGER,DIPL.-PHYS.DR.,RAINER;WILLNEFF,RAINER;ROETTENBACHER,DIPL.-ING.DR.,REINHARD;WILLMANN,DIPL.-PHYS.DR.,GERD |
分类号 |
C04B35/573;C04B37/00;(IPC1-7):04B37/00;04B35/56 |
主分类号 |
C04B35/573 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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