| 摘要 |
PURPOSE:To obtain the semiconductor memory device having less power consumption capable of writing and reading by utilizing the charge coupling phenomenon of an MIS semiconductor device. CONSTITUTION:An aluminum layer 3 is formed on an SiO2 film 2 on an N type substrate 1, and an Al2O3 film 6 is covered thereon. A mast 7 is formed thereon, a window is etched thereat, and a P type layer 4 is formed therethrough. Then, an aluminum layer 5 is formed thereon, is ohmically connected to the layer 4, and electrode G is covered on the side surface of the film 6 and a part of the upper surface thereof, and an electrode S is attached to the substrate 1. The interval DELTAl between the electrode G and the junction J of the layer 4 corresponds to the thickness of the film 6 being exremely short, and accordingly it can be operated with an extremely low voltage. when the electrode G is at negative potential, the depletion layer d1 of the surface of the substrate directly under the electrode G is brought into contact with the junction J of the layer 3. When positive voltage is applied to the electrode E, the layer d1 becomes shallow, while when negative voltage is applied thereto, the depletion layer d2 is expanded from the junction J and is brought into contact with the layer d1. Thus, two states of positive charge storage and non storage are formed, and since the DELTAl is low, the voltage for injecting the charge to the depletion layer d1 becomes very low and the power consumption becomes low. |
