发明名称 |
Temperature detecting device |
摘要 |
A temperature detecting device comprises a temperature detecting element such as a thermistor for sensing temperature changes and a MOS-transistor connected in series with the temperature detecting element. A constant voltage source maintains a constant reference voltage. A voltage comparing circuit compares the voltage across the MOS-transistor or the voltage across the temperature detecting element with the constant reference voltage during periods when the MOS-transistor is turned ON and produces an output signal representative of the temperature. A plurality of MOS-transistors can be used in which case they are connected in parallel with each other and are connected in series with the temperature detecting element. The plurality of MOS-transistors are sequentially turned ON to enable the voltage comparing circuit to compare either the voltages across the MOS-transistors or the voltage across the temperature detecting element with the constant reference voltage during the periods when the MOS-transistors are turned ON.
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申请公布号 |
US4281544(A) |
申请公布日期 |
1981.08.04 |
申请号 |
US19790046053 |
申请日期 |
1979.06.06 |
申请人 |
KABUSHIKI KAISHA DAINI SEIKOSHA |
发明人 |
KANEKO, NOBORU |
分类号 |
G01K7/24;(IPC1-7):G01K7/20 |
主分类号 |
G01K7/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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