| 摘要 |
PURPOSE:To prevent eaveslike etching of the end part of a poly Si layer through etching and also the disconnection of Al wiring by providing an Si3N4 film on a field oxidized film. CONSTITUTION:The field oxidized film is covered with Si3N4. Si3N4 is etched at a lower speed by HF etching liquid than SiO2 and, in fact, is hardly etched. Accordingly, on the occasion of etching of a gate oxidized film, no eaves are caused in the end part of the poly Si 1 on the field oxidized film and, even when a vapor-phase growing film 5 and an Al evaporated film 8 are overlapped thereon later, no contracted part is produced in the end part. As the result, yield and reliability are improved. |
