METHOD OF MAKING THE CONTACT LAYER FROM THE ALUMINIUM EVENT.THE ALLOYS THEREOF ON THE OUTPUR SEMICONDUCTIVE ELEMENTS,申请号CS19800001303-传众专利搜索

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发明名称	METHOD OF MAKING THE CONTACT LAYER FROM THE ALUMINIUM EVENT.THE ALLOYS THEREOF ON THE OUTPUR SEMICONDUCTIVE ELEMENTS
摘要
申请公布号	CS207287(B1)	申请公布日期	1981.07.31
申请号	CS19800001303	申请日期	1980.02.26
申请人	SVAB,PETR,CS;STEJSKAL,PAVEL,CS;RAMAJZL,KAREL,CS	发明人	SVAB,PETR,CS;STEJSKAL,PAVEL,CS;RAMAJZL,KAREL,CS
分类号	H01L21/203;(IPC1-7):H01L21/203	主分类号	H01L21/203
代理机构		代理人
主权项
地址

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