发明名称 SEMICONDUCTOR SUBSTRATE
摘要 <p>PURPOSE:To obtain a highly heat conductive substrate characterized by high adhesion of laminated layers and improved wettability with solder or brazing filer metal, by forming a first layer comprising aluminum on the surface of the substrate comprising aluminum nitride, forming a second layer comprising a thin film of nickel or copper, forming a third layer comprising nickel or copper, and sequentially laminating these layers. CONSTITUTION:A first layer comprising alumina, a second layer comprising a thin film of nickel or copper and a third layer comprising nickel or copper are sequentially formed and laminated on the surface of a substrate comprising aluminum nitride. For example, a sintered aluminum nitride plate having a thickness of 2mm is heated in an atmosphere or in an atmosphere, whose oxygen partial pressure is 0.1-0.2atm to 900-1,200 deg.C. The plate is held for 10-40 minutes. Thus, the first layer comprising alumina is formed to a thickness of 2mum on the surface. Then, the nickel layer is formed on the surface of the first layer as the second layer to a thickness of 5,000Angstrom by a sputtering method. Electrolytic plating of nickel is performed as the third layer to a thickness of 4mum. As an uppermost layer, electrolytic plating of gold is performed to a thickness of 0.5mum, and a semiconductor substrate is formed.</p>
申请公布号 JPS6421932(A) 申请公布日期 1989.01.25
申请号 JP19870177793 申请日期 1987.07.16
申请人 HITACHI METALS LTD 发明人 FUKUSHIMA HIDEKO;IYORI YUSUKE
分类号 H01L21/52;H01L23/12;H01L23/15;H05K3/34 主分类号 H01L21/52
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