| 摘要 |
PURPOSE:To enable the correction of the chipping defect and the residual defect of the subject photomask by a method wherein the evaporation of the defective sections and the vaporization of an evaporating material are performed in one process using a laser beam. CONSTITUTION:A protective film is coated on the pattern surface of a photomask 3, the evaporating material 4 and the mask pattern are positioned in a container 2 facing each other and the container 2 is placed on an XY table 6. Then, when the table 6 is moved to the prescribed location, the slit 121 to be used for the limitation of the irradiating range in the laser optical system is formed at the defective section on the mask 3 using an object lens. Then a laser beam 122 is radiated from a laser device 11, the laser beam 122 is turned into the limited laser beam 123 by the slit 121 and irradiated on the pattern of the mask 3, and the thin metal film and the protective film at the defective section are removed. Then, when such a laser beam having a longer oscillation time than the prescribed time is radiated, the evaporating material of the material 4 is vaporized. The vapor of the evaporated material 4 is adhered to the defective section of the mask 3 and the protective film surrounding the defective section. Then when the protective film of the mask 3 is removed, a corrected photomask is obtained. |
