| 摘要 |
PURPOSE:To obtain a fine high-resistance element, by injecting oxygen or carbon ion selectively into low-ratio resistance silicon to form high-ratio resistance section and using nonselected portion as a contact terminal. CONSTITUTION:A field oxidation membrane 11 is formed by thermal oxidation of silicon on an isolation section of a water 20 which has a transistor formed on surface of a silicon substrate 10, and a 4,000Angstrom -thick amorphous silicon membrane 2 is coveringly attached onto the membrane 11. And then, it, except a part of the amorphous silicon membrane 2, is covered with the wafer 20 by photoresist, and oxygen or carbon ion is injected to turn a hatched section 2a into a high-ratio resistance. And then, a PSG membrane 13 is attached onto the wafer 20, a contact window or an electrode window 13a for a resistance element is opened and an electrode metal of molybdenum is made to contact a low-ratio resistance section 2b of the amorphous silicon membrane 2 through the window 13a to manufacture a resistance element. |
