| 摘要 |
PURPOSE:To reduce the parasitic capacities of source and drain of the semiconductor device and to enable a high speed operation by a method wherein the FET is manufactured using a laser anneal epitaxial growth method. CONSTITUTION:An SiO2 film 32 is formed on a P type Si single crystalline substrate 31 providing an opening part, and an amorphous Si layer or a polycrystalline Si layer 35 is formed on it. The whole surface is irradiated with a laser beam applying the Q-switching method to convert the amorphous Si layer or the polycrystalline Si layer into a single crystalline Si film 35. The diffusion treatment is performed with the Si film 35 to form N<+> type regions 33, 34 and electrodes 37, 38 are provided to be used as the source, drain, and a center part electrode 36 is provided to be used as the gate. Accordingly the capacities of the source 33, the drain 34 against the substrate 31 are reduced, and the high frequency characteristic can be improved. |
