| 摘要 |
<p>in a vacuum container an active gas consisting of either one of active hydrogen, active oxygen and active nitrogen with a partial pressure of 1 × 10<Sup>-2</Sup> Torr or less is produced. In an atmosphere of the active gas, a film, which consists of a compound presenting semiconductor characteristics (CdS, CdSe, ZnSe, ZnS, ZnTe, CdTe) or a solid solution thereof and presents a desired polarity property such as p, n, p<Sup>+</Sup> or n<Sup>+</Sup>, is vapor-deposited on a substrate at a desired position with a desired thickness, so as to fabricate an evaporation device which is preferable, for example, as a photoconductive target for a television camera tube.</p> |
