| 摘要 |
PURPOSE:To correct fluctuations of a plasma effect due to a position by a method wherein when a plasma treatment is applied to a semiconductor wafer, reaction gases in different quantity are supplied from a reaction gas supplier provided with two or more independent reaction gas nozzles. CONSTITUTION:A susceptor 2 holding the wafer 1 and the gas supplier 4 (4A, 4B) are facedly arranged in parallel in a reaction chamber. The gas supplier 4 is formed of two gas suppliers 4A and 4B, which respectively independently control a flow- rate of the reaction gases. The gas supplier may be constructed by two or more parts if necessary. When a silicon nitride film is formed on the wafer 1 by the plasma treatment, generatlly the wafer 1A at the central part is larger than the wafer 1B at the peripheral part in the reaction rate, so that a larger quantity of the reaction gases is supplied to the gas supplier 4B at the peripheral part. Accordingly, the ununiformity in the plasma treatment caused by fluctuations of the plasma effect due to locations can be corrected. |
