| 摘要 |
PURPOSE:To prevent a corrosion and decay of the wiring layer by a method wherein a semiconductor tip having Al wiring layer is covered with PSG film, openings are made therein, the projected electrodes are made in the wiring layer and they are bited into the lower circumference of the electrode and at the same time Cr and Cu layers are arranged at the lower end. CONSTITUTION:SiO2 film 12 is coated on the semiconductor tip 11, a desired pattern of Al wiring layer 13 is formed thereon, all the surfaces are coated by PSG film 14 and positined at the end of the layer 13, openings 15 are made to expose the layer 13. Then the exposed layer 13 is contacted at its end and Cr layer 16 and Cu layer 17 are coated over the entire surface, and an extending metal layer pattern 18 is formed at the end of the layers to make a patterning. Thereafter, a resist film 19 having an opening corresponding to the opening 15 is coated and the projected electrode 20 overlapping on the end of the film 19 is formed on the layer 17 in the opening 15. Then, the film 19 is removed to generate a portion bited into the lower end of the electrode 20, resulting in making a lateral extended electrode 20. |
