| 摘要 |
PURPOSE:To obtain a transistor thermally stabilized by a method wherein a relationship between the thickness of a base region and the specific resistance, a grounded base current gain, and the width of an emitter stripe is specified in a bipolar transistor. CONSTITUTION:In the bipolar transistor, assuming now that WB is taken for the thickness of the base region, rhob for the specific resistance of the base region, alpha for the grounded base current gain, L for the width of the emitter stripe, rhoc for the specific resistance of a collector region, WC for the width of the collector and VCB for the maximum voltage applied to a collector-base junction, the relationship between them shall be specified as shown by a formula in the following: (0.11XalphaX WB)/rhobXL<2>X(1-alpha) (VCB/rhocXWC). In such a way, even when the collector currents are concentrated around the emitter, a thermal runaway does not take place and the transistor is thermally stabilized. |
