| 摘要 |
PURPOSE:To constitute plural kinds of integrated circuits on the same plane by a method wherein a convex part is provided on a semiconductor substrate, an insulating film is piled on the surface, and at the parts of bottom face of the concave parts being removed the insulating layers, semiconductor growth layers are formed to have the same height with the upper face of the convex part. CONSTITUTION:An N<-> type epitaxial layer 13 is provided on the N<+> type substrate 10, and concave parts V2 are formed. At the side faces and at the bottom faces, N<+> type buried layers 11 are formed, the upper face and the side faces of the convex part are covered with the insulating film 7 and N type epitaxial layers 113 are made to grow to have the same height with the first N<-> type layer 13. At this time, shallow concave parts V3 are formed. Then integrated circuits of SIT, MOS-FET, bipolar device, etc., are formed at the respective regions. By this way, the semiconductor integrated circuits having different impurity concentration, conductivity and thickness can be formed to have the same plane. |
