| 摘要 |
PURPOSE:To prevent the trouble by breaking of electrode conductor of the semiconductor device by a method wherein a resist layer used to form openings for etching in a protective layer is heated to deform, and narrower openings are formed using the thermally deformed resist as a mask. CONSTITUTION:A protective film layer 8, a resist layer 18 are formed in order on the semiconductor substrate 1, and openings 15, 16 not reaching to the substrate are formed using the layer 18 as a mask. Then the surface of the resist is made to soften by heating process to make the resist to be exposed on the circumferential surface of the openings in the protective film layer. Narrow openings reaching to the substrate 1 are formed using the newly formed resist layer 18' as a mask, and Al is evaporated to form electrodes on the source, drain regions 2, 3. Therefore because the openings having step part can be formed by performing heating process during the etching process, so that trouble by the breaking of electrode conductor to be followed to the enlargement of depth of the openings can be prevented. |
