| 摘要 |
PURPOSE:To contrive the enhancement of characteristic of a semiconductor element by a method wherein after the surface and the back face of the semiconductor thin plate are finished to form the mirror faces, the circuit element is formed on one face, and then a work strain layer is provided on the other face. CONSTITUTION:Because wafer is formed by slicing an ingot, the surface and the back face of the wafer are rough. Therefore, lapping and polishing are repeated to finish to be mirror faces. Then an epitaxial layer is made to grow on one side surface, and diffusion is performed to form the necessary circuit element. After then, sandblast or polish finish is performed on the back face to form the work strain. By this constitution, because the surface has no undulation or unevenness, a minute pattern can be formed, and because the work strain layer is provided after the formation of the circuit element, the characteristic of the semiconductor element can be improved accordingly. |
