| 摘要 |
PURPOSE:To prevent a wafer from contamination by an electrode component by forming the electrodes locating at the position contacting gas with a compound including carbon, silicon or them wherein the above is applied to a dry etching device using the gas including halogen. CONSTITUTION:A part of electrodes 2, 3 contacting the gas including halogen is formed by the substance not contaminating a semiconductor wafer such as carbon, silicon or the like. Wherein the above is applied to a dry etching device using the gas including halogen as plasma generation gas and the dry etching device consists of the following: a thermionic emission filament 1, a plasma generation cylindrical anode 2, an ion feeding electrode 3, an ion neutralized filament 4, a sampling base 5, gas lead-in tube 6 and a, pressure gauge 7. In this way, the contamination of the semiconductor wafer by conventional electrode metal eroded by halogen will be eliminated and the improvement of etching speed by using the halogen and substance selectivity will sufficiently be displayed as well. |
