| 摘要 |
PURPOSE:To increase a photoresponse velocity by laminating CdS maintaining a phototransmission substrate wherein a transparent conductive film is formed thereon at 200-350 deg.C and treating it in an ambience including O2 at 400-700 deg.C, thereby decreasing a black current piling up CdTe, As2Se3. CONSTITUTION:CdS is vaporized upon a substrate comprizing an In2O3 vaporized on a soda glass keeping said substrate at 200-350 deg.C. When CdS particles become large, a black resistance becomes large. Further, it is very small below 200 deg.C, while it is large over 350 deg.C. Then, it is heated at 400-700 deg.C in the air or an ambience containing O2. At this time, it is heated and cooled by controlling the change of temperature at 2-20 deg.Cmin. After laminating the CdTe and As2Se3 upon CdS having 1-10mum in thickness of approximately 2mum and 0.2mum thereon respectively, an Au-electrode is vaporized. According to this constitution, the photoelectrode conversion element having a small black current and a high velocity photoresponse at the time of reverse current is easily formed. |
