| 摘要 |
<p>PURPOSE:To obtain a highly reliable semiconductor device by a method wherein an Si wafer having an Al wax film and an electrode of W and the like having an Ni and a Cu films are solid-phase adhered at the temperature below the Al-Cu eutectic point. CONSTITUTION:On the n<+> layer of an Si substrate 2 constituting a diode, an Al 1 of about 20mum is evaporated and the adhesive strength between the Si and the Al is increased by performing a sintering in N2 at the temperature of 400 deg.C. On the other hand, Ni3 is plated on a W electrode 5, its adhesiveness with the W is strengthened by performing a sintering in the vacuum atmosphere at 750 deg.C, a Cu4 is evaporated, it is heated, in the N2 at 400 deg.C and the adhesiveness with the Ni is increased. Then the Cu 4 and the Al 1 are contacted and they are solid-phase adhered by processing in the vacuum atmosphere at 450 deg.C for thirty minutes. In this constitution, the Al and Cu can be solid-phase adhered sufficiently below the eutectic point, and the penetrated quantity of the Si into the Al is only several percent or so. As a result, the regrown layer is hardly crystallized on the n<+> layer.</p> |
