发明名称 RANDOM ACCESS MEMORY
摘要 PURPOSE:To decrease power consumption by supplying reduced power voltage to a memory cell circuit. CONSTITUTION:The random access memory equips static type memory cell circuit 31 in which plural cells are arrayed like matrix, address input circuits 32 and 33 which specify the addresses of memory cells, decoder circuits 34 and 35, decoder input circuit 36 which conducts I/O of data to/from memory cells, data output circuit 37, data output control circuit 38, and pressure reduction circuit 39. Reduced voltage is supplied from circuit 39 to circuit 31.
申请公布号 JPS5674888(A) 申请公布日期 1981.06.20
申请号 JP19790149804 申请日期 1979.11.19
申请人 SUWA SEIKOSHA KK 发明人 ASAKAWA TATSUJI
分类号 G11C11/41;G11C11/413 主分类号 G11C11/41
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