发明名称 PREPARATION METHOD OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To connect a metallic wiring to a substrate by a method wherein a contact part between a conductive layer different from a substrate and a metallic wiring is heated by an energy beam. CONSTITUTION:A field oxide film 6 and an N<+> layers 8, 8' are installed on a P type substrate 1 and an opeing is made in a SiO2 film 9 to form Al wirings 12, 13, Next thereto, a laser beam is irradiated to a required wiring connection hole 11' to heat a contact part between the layer 8' and the wiring 13, then, Al penetrates through the layer 8' to reach the substrate 1, thus, making a continuity between the wiring 13 and the substrate 1. With this constitution, the substrate and the wiring can be connected without depending upon a photographic etching.
申请公布号 JPS5674944(A) 申请公布日期 1981.06.20
申请号 JP19790150730 申请日期 1979.11.22
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 IWAI HIROSHI
分类号 H01L29/78;H01L21/263;H01L21/28;H01L21/768;H01L29/41 主分类号 H01L29/78
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