| 摘要 |
PURPOSE:To manufacture infrared ray detection elements at high yield by forming a reverse side electrode on a pyroelectric crystal wafer, depositing a conductive base in close contact with the reverse side electrode and forming a light-receiving plane electrode by a split polishing of the assembly. CONSTITUTION:A reverse side electrode 12 is formed on one plane of the pyroelectric crystal 11. An oxidized film 14 is formed on one plane of a silicon monocrystal substrate 13 and then is etched to form an opening 14a. Following this procedure, the reverse side electrode 12 of the pyroelectric crystal 11 is fixed on the silicon monocrystal substrate 13 through the intermediary of a conductive adhesive 15. Said wafer is split in numerous sections and then is turned to a thin substrate after polishing the pyroelectric crystal 11. The silicon monocrystal 13 is etched using an oxidized film 14 as a mask and a hole 17 is pierced followed by an operation to remove the oxidized film 14. Next, on the polished surface of the pyroelectric crystal 11, a light-receiving plane electrode 18 is attached at a position opposite to the hole 17 and the remainder of the silicon monocrystal 13 is split into two sections to constitute infrared ray detection elements. |
