| 摘要 |
PURPOSE:To avoid the concentration of collector currents to the surroundings of an emitter by a method wherein the concentration of impurities in an active base region contacting with an emitter region forming a transistor is minimized at a central section of the emitter region and increased toward the direction parallel with an emitter-base junction surface. CONSTITUTION:A base region 3 is diffusion-formed on a semiconductor layer 4 functioning as a collector region and coated with a surface protective film 8, a window is made up, a striped emitter region 2 is diffusion-formed in the region 3, and an emitter electrode 5 is attached on the region 2. Windows are built up to the film 8 being located on the region 3 and holding the region 2, striped base electrodes 6 are similarly disposed, and a collector electrode 7 is attached on the back of the layer 4. The concentration of the impurities of the active base region 3 held between the regions 2 and 4 in this constitution is minimized at a central section under the region 2, and increased with separation from the central section. Or the width of the regions 3 is minimized at the central section and maximized at end sections or the width at the end sections is widened. |
