| 摘要 |
PURPOSE:To obtain the thin plate of GaAlAs by etching a substrate crystal after a liquid-phase epitaxial layer has been formed on the crystal face (111)A of GaAs. CONSTITUTION:If the substrate crystal face which is contacted with the melted crystal is made to be (111)A, i.e., a Ga face of (111), the thickness is larger than that of a (100) face, and the thin plate whose light emitting wavelength is 9,000Angstrom or less can be obtained. The P type inversion temperature of said epitaxial layer is about 930 deg.C. Therefore, even though the maximum maintaining temperature of the melted crystal is, e.g., 980 deg.C, and the increase in the amount of the deposition of the crystal is intended, the undesired change of the composition in the vicinity of the P-N junction is not caused. The elimination of the GaAs substrate by the lapping and etching treatment after the formation of the epitaxial layer is easier than in the case of (100) face crystal substrate. In this constitution, the thin plate of the highly efficient GaAlAs infrared ray emitting element can be obtained. |
