| 摘要 |
PURPOSE:To ultraminiaturize an IC through a process consisting of, when the electrode wiring of an MOSIC is made, depositing a Ti film on a semiconductor layer, providing a photoresist mask and making Furon-gas plasma etching of the layer heated to a lower temperature than the softening point of the resist. CONSTITUTION:For making the electrode wiring of an MOSIC, a Ti film is etched using a photoresist mask. Then, the film is post-baked using a positive type resist at 1,200 deg.C, insepected, and formed into a given pattern through Furon-gas plasma etching while a semiconductor layer is heated about 90 deg.C, a lower temperature than the softening point of the resist. Thereby, the central and peripheral portions of the semiconductor layer do not differ in Ti film etching characteristic, a fine pattern is obtained and no punch-through phenomenon occurs. |
