| 摘要 |
PURPOSE:To prevent a short-circuit with an electrode plate by reducing a film thickness of a part or removing a part at a lower position of an electrode plate of a base electrode. CONSTITUTION:A P<+> base layer 3' and an N<+> emitter layer 4 exist on an N<+> type Si substrate 2, and Al electrode layers 4b, 4e are formed, respectively. On the superficial layer of this part, Al is sintered to form 5b, and 5e. An electrode piping is lead out as such that an emitter electrode is split and formed at higher level than a base electrode and an Mo electrode plate 10 is pressure contacted. The thickness of the base electrode is reduced or removed by etching, however, in case of removing, it is lead to a residual peripheral electrode 4b through the layer 5b. An element surface between each electrode layer is coated with SiO2 6 and further, SiO2 16 is laminated. With this constitution, the Mo plate 10 is pressure contacted only by an emitter electrode, thus, being not short-circuited with a base electrode and further, yield and reliability being improved. |
