| 摘要 |
PURPOSE:To obtain a dynamic memory preventing software error occurred due to alpha rays by using a polycrystalline semiconductor film formed through an insulating film on a semiconductor substrate as an electrode layer of an MOS capacitor. CONSTITUTION:An oxide film 8 is selectively formed on the surface of a p type substrate 6, is coated with a polycrystlline silicon film 7, and the film 7 is patterned. Then, it is oxidized with oxidation resistant mask, and an isolating silicon oxide film 9 is formed thereon. Thereafter, gate oxide film 1, polysilicon films 2, 3, gate oxide film 4 and n<+> type region 5 are formed by an ordinary dynamic memory forming process. Since the memory capacitor is thus surrounded by the oxide film if electron and hole pair are formed due to the irradiation of the alpha rays, it is not affected by the interruption of the oxide film, thereby preventing the occurrence of the software error. |
