| 摘要 |
PURPOSE:To obtain a high brightness characteristic by bringing the concentration of the impurities of an N type GaAlAs layer to the optimum value. CONSTITUTION:A P type Ga1-XAlXAs layer 2 and an N type Ga1-YAlYAs layer 3 are formed on a P type GaAs substrate 1 by means of epitaxial growth. In said P type layer 2, carriers are doped in about 1.5X10<18>cm<-3>; in the N type layer 3, Te is doped in 2X10<17>cm<-3>-1X10<18>cm<-3> as N type impurities. |
