发明名称 MAGNETICALLY SENSITIVE SEMICONDUCTOR DEVICE
摘要 <p>A magnetically sensitive semiconductor device for producing a Hall-voltage output in the presence of a magnetic filed. A carrier, which has been injected from the junction between first and second semiconductor regions, is accelerated by means of an electric field in a depletion layer located at the junction between second and third semiconductor regions. The arrangement is such that, owing to the high speed of the carrier, a higher Hall output voltage can be obtained even for comparatively small electric currents. </p>
申请公布号 WO1981001630(P1) 申请公布日期 1981.06.11
申请号 JP1980000288 申请日期 1980.11.26
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