| 摘要 |
PURPOSE:To minimize the lowering of output by a method wherein photoelectric converting active layers are formed on the approximate whole surface of a conductive substrate, a light transmitting conductive film is coated on the active layers, the photoelectric characteristics of a limited region of the conductive film and the substrate are measured, and a current-collecting electrode is made up to a section except faulty regions. CONSTITUTION:Amorphous Si is formed on a stainless steel plate 1 in such a manner that an N<+> layer 2, an i layer 3 and a P<+> layer 4 are laminated successively. And a transparent conductive film 7 in In and an Sn oxide is built up. Photoelectric characteristics are measured between the film 7 and the substrate 1. When measurement is made at about 1cm intervals at that time, it can made without the overlap of regions to be measured. An insulating layer 8 is attached onto a defective location, measuring value thereof does not reach a fixed value, and a current-collecting electrode layer 5 is formed. Thus, reactive power is removed, and high output is obtained. |
