发明名称 Serial readout stratified channel CCD
摘要 A serial readout stratified channel CCD includes a semiconductor substrate with a charge transfer channel lying therein. A barrier region lies under and adjacent to the charge transfer channel; and a plurality of spaced apart charge integration regions lie under and adjacent to the barrier region. The semiconductor substrate and barrier region have dopant atoms of a first type; while the charge transfer channel and plurality of charge integration regions have dopant atoms of a second type opposite to the first type. An insulating layer overlies the charge transfer channel; and a plurality of phase electrodes are serially disposed on the insulating layer transversely to the channel. In operation, charge transfers from the charge integration regions to respective portions of the charge transfer channel, and is propagated along the charge transfer channel.
申请公布号 US4271419(A) 申请公布日期 1981.06.02
申请号 US19780869399 申请日期 1978.01.16
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 HORNBECK, LARRY J.
分类号 H01L27/148;H01L29/10;H01L29/768;(IPC1-7):H01L29/78;H01L27/14;H01L31/00;G11C19/28 主分类号 H01L27/148
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