| 摘要 |
PURPOSE:To prevent Al diffusion and to obtain high-reliability multilayer wiring by forming Al2O3 on an Al wiring layer surface wherein Si3N4 is consisted as a layer insulation film. CONSTITUTION:SiO2 2 is provided on an Si substrate 1 and Al wiring 3 and Si3N4 5 are stacked on the SiO2 2. The film 5 is selectively opened to provide a resist layer 61 and the layer 61 is covered with Al2O3 9, 10 thin films. Then, a connection window 7 is provided by lifting off the Al2O3 10 and an Al layer 8 is stacked on the Al2O3 9 and the window 7. The Al2O3 9 checks the diffusion causing from an Al layer 8 to Si3N4 5 and prevents the short circuit between the Al layer 8 and the Al wiring 3. In this way, high-reliability multilayer wiring will be obtained. |
