| 摘要 |
PURPOSE:To establish the element of high performance and long life, by inserting the p type CdTe between the p<+> type Cu2Te and the n type CdTe, forming pn junction in the CdTe layer, and taking the P<+> type Cu2Te on the surface as the electrode. CONSTITUTION:The n type CdTe 2 added with In is evaporated on the CdS sintering film 1 of low resistance on the aluminum porcelain 6. It is immersed for a short time in CuCl hot water solution to form Cu2-xTe thin layer 4 on the surface. With heat treatment, Cu of the layer 4 is diffused to the layer 2, and the p type CdTe 3 is formed between the p layer 4 and the n layer 4. On the layer 4, the Ag anode 5 is provided in lattice shape and the In-Ga cathode 7 is placed on the film 1. A voltage is caused between the leads 8 and 8' when light is projected from the layer 4. There are two types of junctions of p<+>Cu2-xTe-nCdTe and pCu2-xTe-pCdTe- nCdTe. The latter is high in conversion efficiency, and photo current is caused at pCdTe-nCdTe homogeneous junction. The p<+>Cu2Te plays a role of the electrode only, thus it does not give direct effect on the deterioration of performance, and it becomes longer in life. |
