发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent the erosion of an undesired part of glass when are opening for electrode is to be formed on a semiconductor device having a circular groove having glass passivation by a method wherein a resist is coated with a printer to make the whole surface to be flat. CONSTITUTION:On a semiconductor substrate being performed glass passivation on a circular groove exposing the P-N junction end, a photoresist 11 is applied by printing method to eliminate the stair between the surface of glass and the surface of opening part for electrode and is exposed to a beam using a photo mask 15 to form an opening for electrode. By this way, because a thick photoresist is formed also on the surface part of glass, so that the expossure of the side face of glass to be eroded by an etching liquid is prevented, and the production of an article of inferior quality ensuing from photoetching process can be prevented.
申请公布号 JPS5660018(A) 申请公布日期 1981.05.23
申请号 JP19790134224 申请日期 1979.10.19
申请人 HITACHI LTD 发明人 SUGIYAMA MASAYOSHI;TSURUOKA MASAO;SONOBE YOSHIMI
分类号 H01L21/28;H01L21/027;H01L21/30 主分类号 H01L21/28
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