| 摘要 |
PURPOSE:To exactly connect a wire in the semiconductor device by fixedly securing a semiconductor element through solder on the surface of a die bond on a ceramic substrate and forming an insulating layer between a fine metallic wire bonding part on the surface of the die bond and a semiconductor element fixing part, thereby preventing a solder flow. CONSTITUTION:Au or the like is metallized on the ceramic substrate 1, a die bonding surface 4 is thus formed, and the semiconductor element 2 is fixedly secured through solder 5 made of Au-Si or the like to the die bonding surface 4. An Au or Al fine metallic wire 6 is used to connect between the semiconductor element and, for example, an insular earth bonding area 41. The insulating film 10 made of glass, ceramic or the like is formed between the fine metallic wire bonding part and the semiconductor element fixing part. Thus, this can prevent the flow of solder into the fine metallic wire bonding part at the time of die bonding for an exact wire bonding. |
