| 摘要 |
PURPOSE:To minimize the leakage at high impedance, by setting ''0'' level potential sufficiently lower, through the control of the power supply voltage itself for E (enhancement)/D (depression) type gates, driving buffers. CONSTITUTION:For the drive of a buffer 1 of totem pole type consisting of E type MOSFETs T1, T2, a push-pull circuit of E/D gates 2, 3 is used. By controlling the impedance of the power supply voltage side MOSFETs 4-7 of this push-pull circuit, a voltage with sufficiently small level at high impedance is given to the gate of FETs T1, T2. Thus, the leakage current of the buffer 1 can sufficiently be reduced. |
