发明名称 High capacity sputter-etching apparatus
摘要 A high-throughput apparatus for sputter etching or reactive sputter etching of wafers comprises a large-area electrode centrally disposed within a relatively small-area cylindrical electrode. Wafers to be etched are mounted on the inside surface of the cylindrical electrode. A source of a-c power is capacitively coupled to the cylindrical electrode and the center electrode is grounded. By establishing a suitable plasma within the apparatus, simultaneous anisotropic etching of multiple wafers can be achieved.
申请公布号 US4268374(A) 申请公布日期 1981.05.19
申请号 US19790065185 申请日期 1979.08.09
申请人 BELL TELEPHONE LABORATORIES, INCORPORATED 发明人 LEPSELTER, MARTIN P.
分类号 C25F3/02;C25F7/00;(IPC1-7):C23C15/00 主分类号 C25F3/02
代理机构 代理人
主权项
地址