发明名称 |
High capacity sputter-etching apparatus |
摘要 |
A high-throughput apparatus for sputter etching or reactive sputter etching of wafers comprises a large-area electrode centrally disposed within a relatively small-area cylindrical electrode. Wafers to be etched are mounted on the inside surface of the cylindrical electrode. A source of a-c power is capacitively coupled to the cylindrical electrode and the center electrode is grounded. By establishing a suitable plasma within the apparatus, simultaneous anisotropic etching of multiple wafers can be achieved.
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申请公布号 |
US4268374(A) |
申请公布日期 |
1981.05.19 |
申请号 |
US19790065185 |
申请日期 |
1979.08.09 |
申请人 |
BELL TELEPHONE LABORATORIES, INCORPORATED |
发明人 |
LEPSELTER, MARTIN P. |
分类号 |
C25F3/02;C25F7/00;(IPC1-7):C23C15/00 |
主分类号 |
C25F3/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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