| 摘要 |
PURPOSE:To prevent the mixing-in of impurities into a semiconductor chip by fitting a protection film having a barrier effect against heavy metals to the side and back surfaces of the chip when the chip is housed in the concavity provided in a package through the intermediary of a bonding agent. CONSTITUTION:The semiconductor chip 1 provided with the protection film 7 on the surface 6 thereof is fixed to the bottom surface of the stepped concavity formed in the package 2 by using the bonding agent 4 and each electrode of the chip 1 is connected with a lead formed on the step of the concavity through a bonding wire. Next, the open end of the upper part of the package 2 is covered with a seal plate 3 thus to form the semiconductor device. In this constitution, the protection film 10 formed of Si3N4, SiO2, Al2O3, P2O5, W, Mo, MoSi2, Be or the like having the barrier effect against hevy metals is fitted beforehand to the side surfaces 8-1 and 8-2 and the back surface 9 of the chip 1, whereby the thermal mixing-in of the heavy metals into the chip is prevented and thereby the reliability of the device is increased. |
