| 摘要 |
PURPOSE:To obtain a device which has high turn-on sensitivity and high performance by a method wherein a region for separation is provided between the diode part and thyristor part and the blocking capability of the reverse blocking junction of the diode part is made higher than the blocking capability of the normal blocking junction of the thyristor part. CONSTITUTION:A p type Si substrate 41 is separated by the n type separating region 43' and on the back surface of one substrate 41 an n type emitter layer 43 in the part of thyristor is formed diffusively, while on the surface of the other substrate 41 an n type base layer 42' in the part of diode is provided. Next, on the surface of the substrate 41 in the part of thyristor an n type base layer 42 is formed diffusively in opposition to the layer 43 and inside of the layer 42 a p type emitter region 44 is provided. In this constitution, by such a method as enlarging the depth of the p-n junction 49' generated between the substrate 41 and the layer 42' of the part of diode, the reverse blocking capability in this portion is made higher than the normal blocking capability of the p-n junction 49 between the layer 42 and the region 44 generated in the part of thyristor. After that, a mesa groove 45 for separation is provided on the region 43', while a mesa-hole 47 is also provided in the side, and a surface protection film 48 is attached to this part. |
