| 摘要 |
1,160,086. Semi-conductor devices. WESTERN ELECTRIC CO., Inc. 30 Sept., 1966 [1 Oct., 1965], No.43728/66. Heading H1K. A device is made by providing a multiapertured insulating layer on a semi-conductor substrate, treating the material exposed through the apertures to provide localized PN junctions, or other rectifying elements and connecting to one of the elements with a wire inserted into the associated aperture. In a typical case the substrate 22 (Fig. 2) is monocrystalline silicon formed in part by epitaxial growth and provided with an oxide layer 23 by oxidation or evaporation. Apertures are formed in the layer by photo-resist techniques, the opposite face of the substrate masked and gold barrier type electrodes 24 electroplated on the silicon within the apertures. The substrate is attached to header 22 in an insulating tube 29 and the gold wire 25 pressed onto the oxide layer, where it finds its way into one of the apertures. In alternative devices the gold electrode is replaced by a palladium silicide layer, or PN junctions are formed under the apertures by alloying or gaseous diffusion. In the latter case plated contacts are subsequently formed on the diffused areas. The use of germanium, A II B VI compounds, and A III B v compounds such as gallium arsenide, is also contemplated. |
