Semiconductor selective epitaxial layer forming system - uses laser radiation with mask forming pattern for different crystal growth rates

摘要

The method of forming structured epitaxial layers on semiconductor elements uses molecular radiation which is directed towards the substrate on which is formed a pattern of different crystal regions. Laser radiation is applied selectively to produce a pattern of light and shadow zones, by using a mask. This causes different rates of crystal growth, so that single crystal regions alternate with polycrystalline regions. This forms part of an epitaxial etching system, the wavelength and intensity of the laser radiation being modified selectively. The laser beam may be made up of two sets of radiation of two different wavelengths.