| 摘要 |
PURPOSE:To improve the accuracy of a pattern, by exposing and developing an upper layer resist film contg. titanium, and then, patterning a lower layer resist film by a reactive sputter-etching using the upper layer resist film as a mask, and a gaseous oxygen to form a resist pattern. CONSTITUTION:The resist pattern is formed by exposing and developing the upper layer resist film 3 composed of a polymer contg. the titanium, and then patterning the lower layer resist film 2 by the reactive sputter-etching using the upper layer resist film 3 as the mask and the gaseous oxygen. When the resist film 3 contg. the titanium is subjected to the reactive etching with the gaseous oxygen, the titanium is converted to titanium dioxide 31, etc. As the titanium dioxide 31, etc., has the strong durability against the reactive etching with the gaseous oxygen, the surface of the upper resist film 3 is protected with the titanium dioxide 31, etc., at the time of being slightly converted the surface layer of said film 3 to the titanium dioxide 31 etc., whereby said surface is not further etched. Thus, the accuracy of the pattern is improved. |
