| 摘要 |
1,107,899. Semi-conductor devices. WESTINGHOUSE BRAKE & SIGNAL CO. Ltd. 17 March, 1967 [15 April, 1966], No. 16576/66. Heading H1K. In a semi-conductor controlled rectifier the periphery of the device is chamfered to provide an acute angle in a region 2 of the device between the forward blocking junction 6 and the device edge. The region 2, which carries the gate electrode 7, is of higher resistivity than the two adjacent regions 3, 4 of opposite conductivity type. In the silicon device shown P-type regions 3, 4 are diffused into an N-type wafer 1, the second N-type region 10 being formed by alloying of Au/Sb to the wafer. The cathode 8 is of tungsten. The Au/Sb gate electrode 7 is applied to region 2 through an aperture in the outer region 1, to which an Al/Si anode 9 is bonded. |
