| 摘要 |
<p>The thyristor is limited laterally by a concave rim (13) which, along with the non metallised zones on the surface, is passivated by a layer of glass. The thyristors are formed in a wafer, and glass layers (11) added where they are not metallised. The glass layer is deposited on the concave surface by maintaining the thyristor in a vertical position and rotating the device about its axis whilst immersing its lower part in a liq. suspension of glass spheres. The diced and the individual chips are then chemically etched to render the rims concave. A circular thyristor, manufactured according to this method, having a semiconductor thickness of 700 microns and a surface area of 0.5 square centimetres can support a tension of the order of 6000 volts.</p> |
