| 摘要 |
PURPOSE:To contrive the increase in the control speed of a semiconductor controlled rectifier and in the withstand voltage thereof by forming an n type conductivity type base layer of a gate region and partly shorting the p tyep conductivity type anode region in a thyristor having an emitter shorting structure. CONSTITUTION:A high density p<+> type conductivity type gate region 9 of comblike or mesh shape of longitudinally and laterally fine patterns is formed adjacent to a p type conductivity type base alyer 3a on one surface of an n type conductivity type base layer 1, and the other surface of the base layer is made direct contact with an anode electrode to partly short with a p type conductivity type anode layer 2. Accordingly, the holes injected from the gate electrode 7 are transmitted to the entire elements by the action of the gate region 9, the turn-off time can be shortened, the amount of the holes from the anode layer 2 is limited by the shorting portion 10, and the turn-off speed can be accelerated. Further, since the base layer 1 is substantially increased in thickness, the withstand voltage in the forward bias can be improved. |
