发明名称 ATTACHING METHOD FOR SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To prevent oxidation of the surface of solder and a substrate by a method wherein the substrate on which a semiconductor element is attached is heated, a fixed quantity of fused solder is dripped and the semiconductor element is attached to the substrate with the fused solder. CONSTITUTION:At the same time when a substrate 8 is moved to leftwards, a solder supplying section 11 is shifted to a desired position. And solder is dripped from the solder supplying section 11 on the substrate 8 being heated by a heating section 9 and then the substrate is returned to its former position. Subsequently, an element supplying section 12 is shifted to the same desired position as above, the element is adhered on the dripped molten solder and the element supplying section 12 returns to its former position. These movements are repeatedly performed. Hereby, as an oxide film is hard to grow on the semiconductor surface, the wetting property of solder to the semiconductor element is improved, and radiation effect from the semiconductor element can be increased. Also, as the substrate is heated for a relatively short time, the plated surface of the substrate is not oxidated and an excellent soldering can be performed.
申请公布号 JPS5650524(A) 申请公布日期 1981.05.07
申请号 JP19790127605 申请日期 1979.10.02
申请人 NIPPON ELECTRIC CO 发明人 KOREEDA SHIYOUICHI;TAKABE AKIO
分类号 H01L21/52;H01L21/58;(IPC1-7):01L21/58 主分类号 H01L21/52
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