Method of grooving and vitrification by silicon nitride masking and semiconductor components obtained.

摘要

Given a semiconductor wafer (23) laterally delimited by a groove (30), the upper face of this wafer is covered by a layer of silicon nitride (22) projecting in relation to the main face of the wafer. The vitrification (40) deposited in the groove and above the face towards the boundary of the edge wets the silicon nitride tongue which projects and thus ensures a good protection of the edges of the wafer. Application to power semiconductor components, and especially to transistors.