发明名称 SEPARATION OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To contrive the reduction in the cost of a semiconductor device by suitably employing a linear dicing for vertically cutting the device and a bevel dicing for obliquely cutting the device, and improving the utility of the wafer. CONSTITUTION:A groove 18 having a width W is formed on a wafer 15 having a P-N junction 14 by selecting the portion where does not contribute to its characteristics in an N<+> type layer 11 and employing a dicer 16 having a broader width at the end of a cutting edge 17. Subsequently, the P-N junction 14 portion is separated by a dicer 20 having a tooth 19 formed at a cutting angle theta in a width W, and a semiconductor element 21 is thus obtained. Since it can largely improve the effective utility ratio of the area of the wafer and further employs a dicer adapted for dicing according to this configuration, a mesa type semiconductor device can be consequently obtained economically without the decrease of the cutting speed and without the shortening of the lifetime thereof.</p>
申请公布号 JPS5646545(A) 申请公布日期 1981.04.27
申请号 JP19790123405 申请日期 1979.09.25
申请人 NIPPON ELECTRIC CO 发明人 HIRAOKA SETSUO
分类号 H01L21/301;H01L21/78;(IPC1-7):01L21/78 主分类号 H01L21/301
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