发明名称 PREPARATION OF SEMICONDUCTORRSUPPORTING ELECTRODE
摘要 PURPOSE:To obtain a semiconductor-supporting electrode having small and uniform thermal expansion coefficient by alternately piling a composite material of Cu and spiral C fibers and Cu plates to form one body so that the disorder of the fibers in the lateral and longitudinal directions can be prevented. CONSTITUTION:When the C in a Cu-C fiber is made above 50vol%, a bundle of the fibers can have a fairly even Cu plated layer, and therefore the bundle can be coiled uniformly, so that the undulation of the C fibers is prevented. Moreover, hot- pressing several coiled Cu-C fibers sandwiching Cu plates permits the Cu plates to prevent the deformation of the fibers. Consequently, the contraction coefficient decreases, and also the longitudinal disorder of the fibers largely reduces. In addition, the electrical conductivity can be adjusted by increasing or decreasing the volume of the Cu. The constitution permits an electrode having a uniform thermal expansion coefficient to be formed at a large yield.
申请公布号 JPS5645035(A) 申请公布日期 1981.04.24
申请号 JP19790119369 申请日期 1979.09.19
申请人 HITACHI LTD 发明人 OONUKI HITOSHI;BABA NOBORU;TENNO HIROSHI;KUNIYA KEIICHI;ARAKAWA HIDEO;OGAWA TAKUZOU
分类号 H01L21/52;H01L21/58;(IPC1-7):01L21/58 主分类号 H01L21/52
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