Semiconductor with active zone, esp. spacer, surrounded by metal oxide - formed by anodic oxidn. of metal to give planar surface

摘要

Semiconductor device has a substrate with a metal oxide zone on an area of its surface, formed by anodic oxidn. of the corresp. metal, and an active zone surrounded by this. The metal is Al and the oxide Al2O3. A lift-off spacer (of photoresist material) is placed on the substrate and used as mask for selective etching, then an anodisable metal is applied over the entire surface, including the spacer element, and anodic oxidn. is carried out before or after lift-off. Anodic plasma oxidn. is pref. The semiconductor substrate can have a SiO2 coating, which is also etched. The device is esp. an insulating or sepg. device for the elements in large integrated circuits. A planar surface is obtd. on which a fine pattern can be produced whilst the operating temp. and time are reduced.